SUM70N03-09CP-E3【PDF 2/5 页】MOSFET N-CH D-S 30V D2PAK

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页

SUM70N03-09CP

Vishay Siliconix

SPECIFICATIONS (T J = 2 5 _ C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ a

Max

Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V (BR)DSS

V GS(th)

V GS = 0 V, I D = 250 m A

V DS = V GS , I D = 250 m A

30

1.0

3.0

V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current b

Drain-Source On-State Resistance b

Forward Transconductance b

I GSS

I DSS

I D(on)

r DS(on)

g fs

V DS = 0 V, V GS = " 20 V

V DS = 30 V, V GS = 0 V

V DS = 30 V, V GS = 0 V, T J = 125 _ C

V DS = 5 V, V GS = 10 V

V GS = 10 V, I D = 20 A

V GS = 10 V, I D = 20 A, T J = 175 _ C

V GS = 4.5 V, I D = 20 A

V DS = 15 V, I D = 20 A

100

20

0.0076

0.0115

" 100

1

250

0.0095

0.015

0.014

nA

m A

A

W

S

Dynamic a

Input Capacitance

C iss

2200

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V GS = 0 V, V DS = 25 V, f = 1 MHz

410

180

pF

Gate Resistance

Total Gate Charge c

Gate-Source Charge c

R g

Q g

Q gs

V DS = 15 V, V GS = 10 V, I D = 50 A

0.5

1.5

31

7.5

2.1

45

W

nC

Gate-Drain Charge c

Q gd

5.0

Turn-On Delay Time c

t d(on)

9

15

Rise Time c

Turn-Off Delay Time c

Fall Time c

t r

t d(off)

t f

V DD = 15 V, R L = 0.3 W

I D ^ 50 A, V GEN = 10 V, R g = 2.5 W

80

22

8

120

35

12

ns

Source-Drain Diode Ratings and Characteristic (T C = 25 _ C)

Pulsed Current

I SM

100

A

Diode Forward Voltage b

Source-Drain Reverse Recovery Time

V SD

t rr

I F = 50 A, V GS = 0 V

I F = 50 A, di/dt = 100 A/ m s

1.2

35

1.5

70

V

ns

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width v 300 m s, duty cycle v 2%.

c. Independent of operating temperature.

TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

120

90

60

30

V GS = 10 thru 6 V

5V

4V

120

90

60

30

T C = 125 _ C

0

3V

2V

0

25 _ C

? 55 _ C

0

2

4

6

8

10

0

1

2

3

4

5

6

www.vishay.com

2

V DS ? Drain-to-Source Voltage (V)

V GS ? Gate-to-Source Voltage (V)

Document Number: 71943

S-32523—Rev. D, 08-Dec-03

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SUM85N03-06P-E3 MOSFET N-CH D-S 30V D2PAK

SUM90N06-5M5P-E3 MOSFET N-CH D-S 60V D2PAK

SUM90N08-6M2P-E3 MOSFET N-CH D-S 75V D2PAK

SUM90N08-7M6P-E3 MOSFET N-CH D-S 75V D2PAK

SUM90N10-8M2P-E3 MOSFET N-CH D-S 100V D2PAK

SUP18N15-95-E3 MOSFET N-CH 150V 18A TO220-3

SUP28N15-52-E3 MOSFET N-CH D-S 150V TO220AB

SUP40P10-43-GE3 MOSFET P-CH 100V 36A TO220AB

相关代理商/技术参数

SUM70N04-07L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 175C MOSFET

SUM70N04-07L_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 175 Celsius MOSFET

SUM70N04-07L-E3 功能描述:MOSFET 40V 70A 100W RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SUM70N06-09L-E3 制造商:Vishay Semiconductors 功能描述:

SUM70N06-11 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK

SUM70UF 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER

SUM70UFSMS 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER

SUM75N04-05L-E3 功能描述:MOSFET 40V 75A 250W 5.0mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube